发明申请
- 专利标题： Etching method for semiconductor device
- 专利标题（中）： 半导体器件蚀刻方法
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申请号： US10917043申请日： 2004-08-11
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公开(公告)号： US20050037621A1公开(公告)日： 2005-02-17
- 发明人: Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
- 申请人： Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
- 申请人地址： JP Sendai-shi JP Osaka-shi
- 专利权人： FUJIO MASUOKA,SHARP KABUSHIKI KAISHA
- 当前专利权人： FUJIO MASUOKA,SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Sendai-shi JP Osaka-shi
- 优先权： JP2003-207352 20030812
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01L21/425
摘要：
An etching method for a semiconductor device comprising the steps of: generating an etching species atmosphere above the semiconductor device having a step composed of a main surface and a sidewall; and applying an electric field to accelerate the etching species in one direction and a magnetic field along a plane that crosses the one direction at a specific angle so that the sidewall is etched.