发明申请
- 专利标题： Light-emitting device and manufacturing method thereof
- 专利标题（中）： 发光元件及其制造方法
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申请号： US10916802申请日： 2004-08-11
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公开(公告)号： US20050040414A1公开(公告)日： 2005-02-24
- 发明人: Hideki Hirayama , Katsushi Akita , Takao Nakamura
- 申请人： Hideki Hirayama , Katsushi Akita , Takao Nakamura
- 申请人地址： JP Osaka JP Wako-shi
- 专利权人： Sumitomo Electric Industries, Ltd.,Riken
- 当前专利权人： Sumitomo Electric Industries, Ltd.,Riken
- 当前专利权人地址： JP Osaka JP Wako-shi
- 优先权： JP2003-296474(P) 20030820; JP2004-193809(P) 20040630
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/12 ; H01L33/32 ; H01L33/36 ; H01L33/00
摘要：
To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
公开/授权文献
- US07859007B2 Light-emitting device and manufacturing method thereof 公开/授权日：2010-12-28