A redundancy circuit for use with a semiconductor memory device is provided. The redundancy circuit includes input address buffers for storing input address bits; fuse boxes for storing repair address bits; a comparator for comparing the input address bits stored in the input address buffers with the repair address bits stored in the fuse boxes; and a redundancy enable determiner for determining whether a redundant memory cell is to be applied to the memory device according to a comparison result of the comparator.