发明申请
- 专利标题： Germanium on insulator fabrication via epitaxial germanium bonding
- 专利标题（中）： 通过外延锗键合制造锗绝缘体
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申请号： US10646681申请日： 2003-08-21
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公开(公告)号： US20050042842A1公开(公告)日： 2005-02-24
- 发明人: Ryan Lei , Mohamad Shaheen
- 申请人： Ryan Lei , Mohamad Shaheen
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/786 ; H01L21/84
摘要：
A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the second substrate by bonding the first dielectric film to the second substrate. The bonding resulted in a bonded wafer pair. The first substrate is removed after the bonding to expose epitaxial germanium layer to form the GOI substrate.