A method for protecting intermediate conductive elements, such as bond wires, of semiconductor device assemblies includes selectively altering a state of substantially unconsolidated material adjacent to an intermediate conductive element. Selective alteration of the state of the substantially unconsolidated material may be effected by way of a programmed material consolidation process, such as stereolithography. Programmed material consolidation may be accompanied by a feature-recognition technique, such as machine vision. When a programmed material consolidation process is effected, a plurality of adjacent, mutually adhered regions, such as layers, of a protective structure may be formed.