发明申请
US20050045866A1 Photocathode having A1GaN layer with specified Mg content concentration
审中-公开
具有规定Mg含量浓度的AlGaN层的光电阴极
- 专利标题: Photocathode having A1GaN layer with specified Mg content concentration
- 专利标题(中): 具有规定Mg含量浓度的AlGaN层的光电阴极
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申请号: US10961142申请日: 2004-10-12
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公开(公告)号: US20050045866A1公开(公告)日: 2005-03-03
- 发明人: Hirofumi Kan , Minoru Niigaki , Masashi Ohta , Yasufumi Takagi , Shoichi Uchiyama
- 申请人: Hirofumi Kan , Minoru Niigaki , Masashi Ohta , Yasufumi Takagi , Shoichi Uchiyama
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 优先权: JPP2000-348376 20001115
- 主分类号: H01J1/34
- IPC分类号: H01J1/34 ; H01J29/38 ; H01J31/50 ; H01J40/06 ; H01J43/08 ; H01L29/06
摘要:
Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.