By significantly suppressing or eliminating the channeling effects during implantation of a dopant species into the semiconductor region, the contribution of energy contamination may be studied and the corresponding results may be used in selecting appropriate tool settings for an actual implantation process. In this way, the vertical dopant profile may be controlled more precisely than in conventional processes. In one particular embodiment, the channeling effect is suppressed by an appropriately performed amorphization implantation process.