Invention Application
- Patent Title: Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof
- Patent Title (中): 使用相变二极管存储单元的超高密度存储装置及其制造方法
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Application No.: US10654189Application Date: 2003-09-03
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Publication No.: US20050048733A1Publication Date: 2005-03-03
- Inventor: Gary Ashton , Gary Gibson , Robert Bicknell-Tassius
- Applicant: Gary Ashton , Gary Gibson , Robert Bicknell-Tassius
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G11B9/00 ; G11B9/04 ; G11B9/10 ; G11B11/00 ; G11B11/08 ; H01L21/20
Abstract:
An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
Public/Granted literature
- US06979838B2 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof Public/Granted day:2005-12-27
Information query
IPC分类:
