发明申请
US20050048741A1 Pattern recognition and metrology structure for an x-initiative layout design
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模式识别和计量结构,用于x-initiative布局设计
- 专利标题: Pattern recognition and metrology structure for an x-initiative layout design
- 专利标题(中): 模式识别和计量结构,用于x-initiative布局设计
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申请号: US10653309申请日: 2003-09-02
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公开(公告)号: US20050048741A1公开(公告)日: 2005-03-03
- 发明人: Khoi Phan , Bharath Rangarajan , Bhanwar Singh
- 申请人: Khoi Phan , Bharath Rangarajan , Bhanwar Singh
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F9/00 ; H01L21/301
摘要:
The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer. The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer-to-reticle alignment is improved by the addition of diagonal lines to existing alignment marks to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets. Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.
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