发明申请
US20050050760A1 Substrate drying method, substrate drying apparatus, and semiconductor device manufacturing method
审中-公开
基板干燥方法，基板干燥装置以及半导体装置的制造方法
- 专利标题： Substrate drying method, substrate drying apparatus, and semiconductor device manufacturing method
- 专利标题（中）： 基板干燥方法，基板干燥装置以及半导体装置的制造方法
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申请号： US10868031申请日： 2004-06-16
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公开(公告)号： US20050050760A1公开(公告)日： 2005-03-10
- 发明人: Masamitsu Itoh
- 申请人： Masamitsu Itoh
- 优先权： JP2003-173564 20030618
- 主分类号： F26B11/18
- IPC分类号： F26B11/18 ; F26B21/14 ; H01L21/00 ; H01L21/304 ; F26B17/00
摘要：
A substrate drying method according to the present invention comprises disposing a flat plate which has an opening and which is equal to a substrate or larger than the substrate above the substrate to have a predetermined space between the flat plate and the substrate and discharging a gas from the opening, and moving, by the gas, a removal target on the substrate outside the substrate.
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