发明申请
US20050054136A1 Fabrication of diaphragms and "floating" regions of single crystal semiconductor for MEMS devices
失效
制造用于MEMS器件的单晶半导体的膜片和“浮动”区域
- 专利标题： Fabrication of diaphragms and "floating" regions of single crystal semiconductor for MEMS devices
- 专利标题（中）： 制造用于MEMS器件的单晶半导体的膜片和“浮动”区域
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申请号： US10941562申请日： 2004-09-15
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公开(公告)号： US20050054136A1公开(公告)日： 2005-03-10
- 发明人: Richard Blanchard
- 申请人： Richard Blanchard
- 主分类号： B81B3/00
- IPC分类号： B81B3/00 ; H01L21/00
摘要：
A single crystal semiconductor region is fabricated in a semiconductor wafer. The region is either cantilevered, supported at one or both ends, or midpoint, or supported at multiple locations. After a pattern and etch step, a dielectric fill step is performed to define the boundaries of the region in the semiconductor wafer. Oxygen or nitrogen is implanted in the semiconductor wafer on a surface area of the semiconductor wafer that corresponds to a top surface of the region. The annealing of the oxygen or nitrogen ions convert the silicon to an oxide or a nitride beneath the surface area. The silicon dioxide or silicon nitride is etched away to produce a semiconducting region of a single crystal material.
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