发明申请
- 专利标题： Method of producing complementary sige bipolar transistors
- 专利标题（中）： 制造互补型双极晶体管的方法
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申请号： US10928655申请日： 2004-08-26
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公开(公告)号： US20050054170A1公开(公告)日： 2005-03-10
- 发明人: Philipp Steinmann , Scott Balster , Badih El-Kareh , Thomas Scharnagl
- 申请人： Philipp Steinmann , Scott Balster , Badih El-Kareh , Thomas Scharnagl
- 优先权： DE10340182.2 20030901
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8228 ; H01L29/737 ; H01L21/44 ; H01L21/8222
摘要：
Method of producing complementary SiGe bipolar transistors. In a method of producing complementary SiGe bipolar transistors, interface oxide layers (38, 58) for NPN and PNP emitters (44, 64), are separately formed and emitter polysilicon (40, 60) is separately patterned, allowing these layers to be optimized for the respective conductivity type.
公开/授权文献
- US07192838B2 Method of producing complementary SiGe bipolar transistors 公开/授权日：2007-03-20
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