发明申请
US20050062118A1 Quantum efficiency enhancement for CMOS imaging sensor with borderless contact
有权
具有无边界接触的CMOS成像传感器的量子效率增强
- 专利标题： Quantum efficiency enhancement for CMOS imaging sensor with borderless contact
- 专利标题（中）： 具有无边界接触的CMOS成像传感器的量子效率增强
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申请号： US10669516申请日： 2003-09-24
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公开(公告)号： US20050062118A1公开(公告)日： 2005-03-24
- 发明人: Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
- 专利权人： Taiwan Semiconductor Manufacturing Co.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/82 ; H01L27/14 ; H01L27/146 ; H01L29/82 ; H01L31/00 ; H04N5/335
摘要：
The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
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