Invention Application
US20050064606A1 Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
有权
用于制造Cu-镶嵌技术中的相变存储器阵列的方法和由其制造的相变存储器阵列
- Patent Title: Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
- Patent Title (中): 用于制造Cu-镶嵌技术中的相变存储器阵列的方法和由其制造的相变存储器阵列
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Application No.: US10902508Application Date: 2004-07-29
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Publication No.: US20050064606A1Publication Date: 2005-03-24
- Inventor: Fabio Pellizzer , Roberto Bez
- Applicant: Fabio Pellizzer , Roberto Bez
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.I.
- Current Assignee: STMicroelectronics S.r.I.
- Current Assignee Address: IT Agrate Brianza
- Priority: EP03425536.4 20030805
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L21/00
Abstract:
A process for manufacturing a phase change memory array, includes the steps of: forming a plurality of PCM cells, arranged in rows and columns; and forming a plurality of resistive bit lines for connecting PCM cells arranged on a same column, each resistive bit lines comprising a respective phase change material portion, covered by a respective barrier portion. After forming the resistive bit lines, electrical connection structures for the resistive bit lines are formed directly in contact with the barrier portions of the resistive bit lines.
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Information query
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