发明申请
US20050064686A1 STRAINED SILICON ON RELAXED SIGE FILM WITH UNIFORM MISFIT DISLOCATION DENSITY
有权
松散信号膜上的应变硅,具有均匀杂散偏差密度
- 专利标题: STRAINED SILICON ON RELAXED SIGE FILM WITH UNIFORM MISFIT DISLOCATION DENSITY
- 专利标题(中): 松散信号膜上的应变硅,具有均匀杂散偏差密度
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申请号: US10667603申请日: 2003-09-23
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公开(公告)号: US20050064686A1公开(公告)日: 2005-03-24
- 发明人: Dureseti Chidambarrao , Omer Dokumaci
- 申请人: Dureseti Chidambarrao , Omer Dokumaci
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C30B1/00 ; H01L21/20 ; H01L21/265 ; H01L21/322 ; H01L21/324 ; H01L21/36 ; H01L29/10
摘要:
A method for forming a semiconductor substrate structure is provided. A compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted onto the SiGe layer to cause end-of-range damage. Annealing is performed to relax the strained SiGe layer. During the annealing, interstitial dislocation loops are formed as uniformly distributed in the SiGe layer. The interstitial dislocation loops provide a basis for nucleation of misfit dislocations between the SiGe layer and the silicon substrate. Since the interstitial dislocation loops are distributed uniformly, the misfit locations are also distributed uniformly, thereby relaxing the SiGe layer. A tensilely strained silicon layer is formed on the relaxed SiGe layer.