发明申请
US20050074948A1 Method of manufacturing shallow trench isolation structure using HF vapor etching process
审中-公开
使用HF蒸汽蚀刻工艺制造浅沟槽隔离结构的方法
- 专利标题： Method of manufacturing shallow trench isolation structure using HF vapor etching process
- 专利标题（中）： 使用HF蒸汽蚀刻工艺制造浅沟槽隔离结构的方法
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申请号： US10949426申请日： 2004-09-24
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公开(公告)号： US20050074948A1公开(公告)日： 2005-04-07
- 发明人: Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
- 申请人： Hyung-Ho Ko , Woo-Gwan Shim , Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi
- 优先权： KR2003-69727 20031007
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
In a method of manufacturing a shallow trench isolation (STI) structure using a HF vapor etching process according to some embodiments of the invention, a trench is formed in a semiconductor substrate. A buffer layer and a first insulating layer, which fill the trench, are formed. A portion of the first insulating layer is removed by performing an etching process using HF vapor, thereby removing a void existing in the first insulating layer. A second insulating layer filling the trench is formed on the etched first insulating layer. Other embodiments of the invention are described and claimed.
公开/授权文献
- US1636604A Channeler steel 公开/授权日：1927-07-19
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