发明申请
US20050077522A1 Thin film transistor substrate for display device and fabricating method thereof
有权
用于显示装置的薄膜晶体管基板及其制造方法
- 专利标题: Thin film transistor substrate for display device and fabricating method thereof
- 专利标题(中): 用于显示装置的薄膜晶体管基板及其制造方法
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申请号: US10962541申请日: 2004-10-13
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公开(公告)号: US20050077522A1公开(公告)日: 2005-04-14
- 发明人: Youn Chang , Heung Cho
- 申请人: Youn Chang , Heung Cho
- 专利权人: LG.Philips LCD Co., Ltd.
- 当前专利权人: LG.Philips LCD Co., Ltd.
- 优先权: KRP2003-71503 20031014
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; G02F1/1362 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/13 ; H01L29/10
摘要:
A thin film transistor substrate for a display device includes a gate line; a gate insulating film disposed over the gate line; a data line disposed on the gate insulating film intersecting with the gate line to define a pixel area; a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a channel between the source electrode and the drain electrode; a protective film disposed covering the gate line, the data line, and the thin film transistor; a pixel electrode connected to the drain electrode of the thin film transistor; and a storage capacitor having a first upper storage electrode connected to the pixel electrode, and a second upper storage electrode connected to the first upper storage electrode on a side surface basis via a first contact hole passing through the protective film and the first upper storage electrode at an overlapping portion of the gate line and the first upper storage electrode.
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