发明申请
US20050077552A1 Metal-oxide-semiconductor device with enhanced source electrode
有权
具有增强型源电极的金属氧化物半导体器件
- 专利标题: Metal-oxide-semiconductor device with enhanced source electrode
- 专利标题(中): 具有增强型源电极的金属氧化物半导体器件
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申请号: US10673539申请日: 2003-09-29
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公开(公告)号: US20050077552A1公开(公告)日: 2005-04-14
- 发明人: Frank Baiocchi , Bailey Jones , Muhammed Shibib , Shuming Xu
- 申请人: Frank Baiocchi , Bailey Jones , Muhammed Shibib , Shuming Xu
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8234 ; H01L29/08 ; H01L29/417 ; H01L29/45 ; H01L29/76 ; H01L29/78 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要:
An MOS device is formed including a semiconductor layer of a first conductivity type, a first source/drain region of a second conductivity type formed in the semiconductor layer, and a second source/drain region of the second conductivity type formed in the semiconductor layer and spaced apart from the first source/drain region. A gate is formed proximate an upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. The MOS device further includes at least one contact, the at least one contact including a silicide layer formed on and in electrical connection with at least a portion of the first source/drain region, the silicide layer extending laterally away from the gate. The contact further includes at least one insulating layer formed directly on the silicide layer.