Invention Application
- Patent Title: Protecting structure for electrostatic discharge
- Patent Title (中): 静电放电保护结构
-
Application No.: US10900104Application Date: 2004-07-28
-
Publication No.: US20050078232A1Publication Date: 2005-04-14
- Inventor: Chang-Cheng Lo , Hong-Jye Hong
- Applicant: Chang-Cheng Lo , Hong-Jye Hong
- Assignee: AU Optronics Corp.
- Current Assignee: AU Optronics Corp.
- Priority: TW92128141 20031009
- Main IPC: G02F1/1362
- IPC: G02F1/1362 ; G02F1/1333

Abstract:
A protecting structure for ESD is formed on a substrate of a TFT-LCD. A display area of the TFT-LCD is formed by a pixel array comprising lots of pixel units, scan lines and data lines. The protecting structure comprises a first rake metal and an α-Si layer. The first rake metal is formed outside the display area and each short end of the first rake metal faces the data line by a spacing. Further, all tips of the short end and the data lines are sharp in shape so as to accumulate electrostatic charges. The α-Si layer is formed directly under the predetermined short end of first rake metal and the corresponding data line. The α-Si layer is used to serve as a discharging path for performing through breakdown to the α-Si layer so as to eliminate electrostatic charges.
Public/Granted literature
- US07158194B2 Protecting structure for electrostatic discharge Public/Granted day:2007-01-02
Information query
IPC分类: