发明申请
- 专利标题： Developing method, substrate treating method, and substrate treating apparartus
- 专利标题（中）： 显影方法，底物处理方法和底物处理方法
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申请号： US10969018申请日： 2004-10-21
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公开(公告)号： US20050081996A1公开(公告)日： 2005-04-21
- 发明人: Masamitsu Itoh , Ikuo Yoneda , Hideaki Sakurai
- 申请人： Masamitsu Itoh , Ikuo Yoneda , Hideaki Sakurai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2002-252503 20020830
- 主分类号： G03F7/30
- IPC分类号： G03F7/30 ; H01L21/027 ; H01L21/304 ; C23F1/00
摘要：
A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.
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