发明申请
- 专利标题： Method for reading memory cells
- 专利标题（中）： 读取存储单元的方法
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申请号： US10686271申请日： 2003-10-15
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公开(公告)号： US20050083733A1公开(公告)日： 2005-04-21
- 发明人: Manoi Bhattacharyya , Thomas Anthony , Anthony Holden
- 申请人： Manoi Bhattacharyya , Thomas Anthony , Anthony Holden
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; H01L21/8246 ; H01L27/105
摘要：
A method for reading the magnetization orientation of a memory cell includes applying a magnetic field to the memory cell, observing any change in resistance of the memory cell as the magnetic field is applied, and determining the magnetization orientation based upon the observed change in resistance of the memory cell.
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