A word line enable timing determination circuit of a memory device and method of determining word line enable timing in a memory device may be configured to adjust enable timing at which to activate a word line for at least one read/write command input to the memory device. This may be based on whether the memory device is performing a hidden refresh operation. In an example, and when a read/write command is input to the memory device, a word line for the read/write command may be activated after a first delay if the memory device is not executing a hidden refresh operation. Otherwise, a word line for the read/write command is activated after a second delay.