发明申请
US20050084805A1 Method for forming patterned ITO structure by using photosensitive ITO solution
审中-公开
通过使用感光ITO溶液形成图案化ITO结构的方法
- 专利标题： Method for forming patterned ITO structure by using photosensitive ITO solution
- 专利标题（中）： 通过使用感光ITO溶液形成图案化ITO结构的方法
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申请号： US10687612申请日： 2003-10-20
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公开(公告)号： US20050084805A1公开(公告)日： 2005-04-21
- 发明人: Lu-Yi Yang , Ching-Chung Cheng , Yen-Ting Shen , Yuan-Chi Lin
- 申请人： Lu-Yi Yang , Ching-Chung Cheng , Yen-Ting Shen , Yuan-Chi Lin
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G03F7/004 ; G03F7/20 ; H01L21/00 ; H01L31/18
摘要：
A method for forming a patterned ITO structure by using a photosensitive ITO solution is provided. By mixing both the ITO and photosensitive material to form a photosensitive ITO solution on a substrate, a patterned ITO structure is available by directly exposing and developing the photosensitive ITO layer. Significantly, no photo-resist layer is required.
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