发明申请
- 专利标题： Integrated circuit with protected implantation profiles and method for the formation thereof
- 专利标题（中）： 具有保护注入轮廓的集成电路及其形成方法
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申请号： US10689923申请日： 2003-10-17
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公开(公告)号： US20050085056A1公开(公告)日： 2005-04-21
- 发明人: Tommy Lai , Pradeep Ramachandramurthy Yelehanka , Jia Zheng , Weining Li
- 申请人： Tommy Lai , Pradeep Ramachandramurthy Yelehanka , Jia Zheng , Weining Li
- 申请人地址： SG Singapore 738406
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore 738406
- 主分类号： H01L21/3115
- IPC分类号： H01L21/3115 ; H01L21/314 ; H01L21/8239 ; H01L21/8247 ; H01L21/425 ; H01L21/336 ; H01L21/31 ; H01L21/469
摘要：
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.
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