发明申请
US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor
审中-公开
热电装置，制造方法和红外传感器
- 专利标题： Pyroelectric device, method for manufacturing same and infrared sensor
- 专利标题（中）： 热电装置，制造方法和红外传感器
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申请号： US10503328申请日： 2003-12-04
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公开(公告)号： US20050087689A1公开(公告)日： 2005-04-28
- 发明人: Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
- 申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
- 优先权： JP2002-354083 20021205; JP2003-33552 20030212; JP2003-280941 20030728
- 国际申请： PCT/JP03/15564 WO 20031204
- 主分类号： G01J5/34
- IPC分类号： G01J5/34 ; H01L37/02 ; G01J5/00
摘要：
A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
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