发明申请
US20050089765A1 Method of a floating pattern loading system in mask dry-etching critical dimension control
有权
掩模干蚀刻临界尺寸控制中浮动图案加载系统的方法
- 专利标题： Method of a floating pattern loading system in mask dry-etching critical dimension control
- 专利标题（中）： 掩模干蚀刻临界尺寸控制中浮动图案加载系统的方法
-
申请号： US10694426申请日： 2003-10-27
-
公开(公告)号： US20050089765A1公开(公告)日： 2005-04-28
- 发明人: Fei-Gwo Tsai , Wei-Zen Chou , Zong-Xian Tsai
- 申请人： Fei-Gwo Tsai , Wei-Zen Chou , Zong-Xian Tsai
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G03F1/14 ; G03F9/00
摘要：
The invention calculates an optimum etch recipe for etching a product pattern in an opaque material of a photolithographic exposure mask with the objective of achieving optimum CD performance of the product pattern. If, for this optimum etch recipe, the optimum CD performance cannot be achieved, dummy patterns are added to the mask that is used to etch the opaque material. If this latter approach still cannot achieve optimum CD performance, the product pattern to which the dummy pattern has been added is separated into two patterns such that one of these two patterns provides a Cr loading that assures optimum CD performance of the product pattern.
公开/授权文献
信息查询
