Invention Application
- Patent Title: Erasable and programmable read only memory (EPROM) device and method of manufacturing a semiconductor device having the same
- Patent Title (中): 可擦除和可编程只读存储器（EPROM）器件及其制造方法
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Application No.: US10973894Application Date: 2004-10-26
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Publication No.: US20050093079A1Publication Date: 2005-05-05
- Inventor: Ki-Hyung Lee , Seung-Han Yoo
- Applicant: Ki-Hyung Lee , Seung-Han Yoo
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Priority: KR2003-77188 20031101
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L21/82 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/94
Abstract:
Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film is interposed between the gate and the PEOX film in the main chip region.
Public/Granted literature
Information query
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