A bipolar transistor is composed of a collector region, a base region connected to the collector region, an emitter region connected to the base region, an emitter electrode, a base electrode, and at lease one of first and second resistive layers of granular metal-dielectric material. The first resistive layer is disposed between the emitter region and the emitter electrode, and the second resistive layer is disposed between the base region and the base electrode. The resistivity of granular metal-dielectric material is widely adjustable by a volume ratio of metal granules to a dialectic matrix. This allows the resistive layers to have a sufficiently large perpendicular resistance to avoid thermal runaway with a reduced thickness.