发明申请
US20050094918A1 Tunable resonant cavity based on the field effect in semiconductors 有权
基于半导体场效应的可调谐谐振腔

Tunable resonant cavity based on the field effect in semiconductors
摘要:
The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.
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