发明申请
- 专利标题： Heat-processing method and apparatus for semiconductor process
- 专利标题（中）： 半导体工艺的加热方法和装置
-
申请号： US10924959申请日： 2004-08-25
-
公开(公告)号： US20050095826A1公开(公告)日： 2005-05-05
- 发明人: Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
- 申请人： Takehiko Fujita , Akitake Tamura , Keisuke Suzuki , Kazuhide Hasebe , Mitsuhiro Okada
- 优先权： JP2003-304297 20030828
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; C23C16/44 ; C23C16/46 ; H01L21/00 ; H01L21/205 ; H01L21/24
摘要：
A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.