发明申请
- 专利标题: Vertical impedance sensor arrangement and method for producing a vertical impedance sensor arrangement
- 专利标题(中): 垂直阻抗传感器布置和垂直阻抗传感器布置方法
-
申请号: US10939319申请日: 2004-09-09
-
公开(公告)号: US20050100938A1公开(公告)日: 2005-05-12
- 发明人: Franz Hofmann , Richard Luyken , Wolfgang Roesner
- 申请人: Franz Hofmann , Richard Luyken , Wolfgang Roesner
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 优先权: DE10211358.0 20020314
- 主分类号: C12Q1/68
- IPC分类号: C12Q1/68 ; G01N33/543
摘要:
Vertical impedance sensor arrangement including a substrate, a first electrically conductive structure having a first uncovered surface and being arranged in and/or on the substrate, a spacer arranged above the substrate and/or at least partially on the first electrically conductive structure, a second electrically conductive structure having a second uncovered surface and being arranged on the spacer, and capture molecules, which are immobilized on the first and on the second uncovered surface, are set up such that particles to be detected hybridize with the capture molecules. The spacer is formed separately from the substrate, and the thickness of the spacer is defined by means of a deposition method.
信息查询