发明申请
- 专利标题： Methods of manufacturing a stressed MOS transistor structure
- 专利标题（中）： 制造应力MOS晶体管结构的方法
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申请号： US11024259申请日： 2004-12-27
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公开(公告)号： US20050104057A1公开(公告)日： 2005-05-19
- 发明人: M. Shaheed , Thomas Hoffmann , Mark Armstrong , Christopher Auth
- 申请人： M. Shaheed , Thomas Hoffmann , Mark Armstrong , Christopher Auth
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78 ; H01L29/06
摘要：
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.
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