发明申请
- 专利标题： Method of forming piezoelectric layer, heating apparatus used in the same, piezoelectric layer, and piezoelectric element
- 专利标题（中）： 形成压电层的方法，其中使用的加热装置，压电层和压电元件
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申请号： US10883035申请日： 2004-07-02
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公开(公告)号： US20050109456A1公开(公告)日： 2005-05-26
- 发明人: Toshiaki Yokouchi , Koji Sumi
- 申请人： Toshiaki Yokouchi , Koji Sumi
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-191247 20030703
- 主分类号： B41J2/045
- IPC分类号： B41J2/045 ; B41J2/055 ; B41J2/135 ; B41J2/14 ; B41J2/16 ; F27B17/00 ; F27D5/00 ; H01L41/04 ; H01L41/08 ; H01L41/09 ; H01L41/187 ; H01L41/22 ; H01L41/318 ; H01L41/39 ; H02N2/00 ; B32B31/26
摘要：
A method of forming a piezoelectric layer includes: a drying step for forming at least one ferroelectric precursor film on a lower electrode of a substrate and drying the ferroelectric precursor film; a degreasing step for carrying the substrate into a region facing a hot plate heated to a certain temperature and for degreasing the ferroelectric precursor film in a state where the substrate is supported by a proximity pin; and a baking step for further baking the degreased ferroelectric precursor film to form the degreased ferroelectric precursor film into a ferroelectric film. The piezoelectric layer is formed by repeating the drying, degreasing, and baking steps for the ferroelectric precursor film in a predetermined number of cycles. The degreasing step includes a step of adjusting a heating temperature of the ferroelectric precursor film by adjusting a distance between the hot plate and the substrate and by lowering a temperature of space on an opposite side of the substrate from the hot plate.