发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US10953070申请日： 2004-09-30
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公开(公告)号： US20050110132A1公开(公告)日： 2005-05-26
- 发明人: Ryoichi Yokoyama , Koji Yamano , Yasuhiro Takeda , Koji Hirosawa
- 申请人： Ryoichi Yokoyama , Koji Yamano , Yasuhiro Takeda , Koji Hirosawa
- 申请人地址： JP Moriguchi-city 570-8677
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-city 570-8677
- 优先权： JP2003-340653 20030930
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L21/00 ; H01L21/3205 ; H01L23/34 ; H01L23/52 ; H01L29/423 ; H01L29/49 ; H01L29/786
摘要：
A semiconductor device includes a glass substrate, a heat sink formed on the glass substrate and a transistor formed on the heat sink. The transistor includes an active layer formed on the heat sink and having a source region, a channel region and a drain region. A gate electrode is placed on the channel region. In addition, the heat sink may operate as additional gate electrode.
公开/授权文献
- US07053426B2 Semiconductor device with heat sink 公开/授权日：2006-05-30
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