发明申请
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US10790764申请日： 2004-03-03
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公开(公告)号： US20050111247A1公开(公告)日： 2005-05-26
- 发明人: Norikatsu Takaura , Hideyuki Matsuoka , Motoyasu Terao , Kenzo Korutsuchi , Tsuyoshi Yamauchi
- 申请人： Norikatsu Takaura , Hideyuki Matsuoka , Motoyasu Terao , Kenzo Korutsuchi , Tsuyoshi Yamauchi
- 优先权： JPP2003-145305 20030522
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L27/24 ; H01L29/02
摘要：
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
公开/授权文献
- US07071485B2 Semiconductor integrated circuit device 公开/授权日：2006-07-04