发明申请
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10967279申请日： 2004-10-19
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公开(公告)号： US20050112805A1公开(公告)日： 2005-05-26
- 发明人: Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
- 申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2003-368029 20031028
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/762 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/32 ; H01L51/52 ; H01L51/56 ; H01L21/00
摘要：
It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
公开/授权文献
- US07241666B2 Method for manufacturing semiconductor device 公开/授权日：2007-07-10
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