发明申请
US20050112845A1 Method for fabricating a substrate with useful layer on high resistivity support
有权
在高电阻率支撑件上制造具有有用层的衬底的方法
- 专利标题： Method for fabricating a substrate with useful layer on high resistivity support
- 专利标题（中）： 在高电阻率支撑件上制造具有有用层的衬底的方法
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申请号： US10968695申请日： 2004-10-18
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公开(公告)号： US20050112845A1公开(公告)日： 2005-05-26
- 发明人: Bruno Ghyselen , Hubert Moriceau
- 申请人： Bruno Ghyselen , Hubert Moriceau
- 优先权： FR0205054 20020423
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/02 ; H01L21/322 ; H01L21/762 ; H01L29/32 ; H01L21/30
摘要：
A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.