发明申请
- 专利标题： Method of forming a contact plug in a semiconductor device
- 专利标题（中）： 在半导体器件中形成接触插塞的方法
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申请号： US10984494申请日： 2004-11-09
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公开(公告)号： US20050112870A1公开(公告)日： 2005-05-26
- 发明人: Sung Park
- 申请人： Sung Park
- 优先权： KR2003-84311 20031126; KR2003-84313 20031126
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/3205 ; H01L21/44 ; H01L21/4763 ; H01L21/768 ; H01L21/8234 ; H01L21/8244
摘要：
A contact plug is formed in a semiconductor device having a silicon substrate having a gate electrode, a junction area and an insulating interlayer. A contact hole is formed to expose the junction area. A plasma process is carried out with respect to a resultant substrate, thereby removing natural oxides created on an exposed surface of the junction area. A first silicon layer is deposited on the contact hole and on the insulating interlayer. A heat-treatment process is carried out with respect to the first silicon layer so as to grow the amorphous silicon into the epitaxial silicon. A second silicon layer is deposited on the first silicon layer.
公开/授权文献
- US07049230B2 Method of forming a contact plug in a semiconductor device 公开/授权日：2006-05-23
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