- 专利标题: System and method for lithography simulation
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申请号: US11037988申请日: 2005-01-18
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公开(公告)号: US20050122500A1公开(公告)日: 2005-06-09
- 发明人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 申请人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 主分类号: G03B27/54
- IPC分类号: G03B27/54 ; G03F20060101 ; G03F7/20 ; G06F17/50 ; G06K9/00 ; G06T7/00
摘要:
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.
公开/授权文献
- US07117478B2 System and method for lithography simulation 公开/授权日:2006-10-03
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