发明申请
- 专利标题： Semiconductor devices including an external power voltage control function and methods of operating the same
- 专利标题（中）： 包括外部电源电压控制功能的半导体器件及其操作方法
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申请号： US11005523申请日： 2004-12-06
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公开(公告)号： US20050122820A1公开(公告)日： 2005-06-09
- 发明人: Jong-Hyun Choi , Mi-Jo Kim , Kwang-Sook Noh , Beob-Rae Cho
- 申请人： Jong-Hyun Choi , Mi-Jo Kim , Kwang-Sook Noh , Beob-Rae Cho
- 优先权： KR2003-87877 20031205
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; G11C7/00 ; G11C7/20 ; G11C11/4074
摘要：
A semiconductor device includes a memory and a power voltage interrupter configured to interrupt an external power voltage applied to circuitry of the semiconductor device responsive to a Deep Power Down (DPD) command signal generated in a DPD mode of the memory. A power voltage shifter is configured to shift a power voltage in the circuitry to a specific level responsive to the DPD command signal.
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