发明申请
US20050126710A1 Device and method for anisotropically plasma etching of a substrate, particularly a silicon body
有权
用于各向异性等离子体蚀刻衬底，特别是硅体的装置和方法
- 专利标题： Device and method for anisotropically plasma etching of a substrate, particularly a silicon body
- 专利标题（中）： 用于各向异性等离子体蚀刻衬底，特别是硅体的装置和方法
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申请号： US10506457申请日： 2003-03-05
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公开(公告)号： US20050126710A1公开(公告)日： 2005-06-16
- 发明人: Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
- 申请人： Franz Laermer , Klaus Breitschwerdt , Bernd Kutsch
- 优先权： DE10209763.1 20030305; DE10249350.2 20021023
- 国际申请： PCT/DE03/00676 WO 20030305
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23F1/00
摘要：
A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.
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