发明申请
US20050130387A1 Shallow trench isolation fill by liquid phase deposition of SiO2
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浅沟槽隔离填充SiO 2的液相沉积
- 专利标题： Shallow trench isolation fill by liquid phase deposition of SiO2
- 专利标题（中）： 浅沟槽隔离填充SiO 2的液相沉积
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申请号： US10732953申请日： 2003-12-11
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公开(公告)号： US20050130387A1公开(公告)日： 2005-06-16
- 发明人: Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人： Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L27/01 ; H01L21/76 ; H01L31/0392
摘要：
To isolate two active regions formed on a silicon-on-insulator (SOI) substrate, a shallow trench isolation region is filled with liquid phase deposited silicon dioxide (LPD-SiO2) while avoiding covering the active areas with the oxide. By selectively depositing the oxide in this manner, the polishing needed to planarize the wafer is significantly reduced as compared to a chemical-vapor deposited oxide layer that covers the entire wafer surface. Additionally, the LPD-SiO2 does not include the growth seams that CVD silicon dioxide does. Accordingly, the etch rate of the LPD-SiO2 is uniform across its entire expanse thereby preventing cavities and other etching irregularities present in prior art shallow trench isolation regions in which the etch rate of growth seams exceeds that of the other oxide areas.