发明申请
US20050133125A1 Ultrafine-grain-copper-base sputter targets 有权
超细晶粒铜基溅射靶

Ultrafine-grain-copper-base sputter targets
摘要:
The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.
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