发明申请
US20050133865A1 Member which includes porous silicon region, and method of manufacturing member which contains silicon
审中-公开
包括多孔硅区域的构件以及包含硅的构件的制造方法
- 专利标题： Member which includes porous silicon region, and method of manufacturing member which contains silicon
- 专利标题（中）： 包括多孔硅区域的构件以及包含硅的构件的制造方法
-
申请号： US11008923申请日： 2004-12-13
-
公开(公告)号： US20050133865A1公开(公告)日： 2005-06-23
- 发明人: Hajime Ikeda , Kiyofumi Sakaguchi , Nobuhiko Sato
- 申请人： Hajime Ikeda , Kiyofumi Sakaguchi , Nobuhiko Sato
- 申请人地址： JP TOKYO
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP TOKYO
- 优先权： JP2003-425827 20031222
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/02 ; H01L21/306 ; H01L21/762 ; H01L27/12 ; H01L21/00 ; H01L21/30 ; H01L21/425 ; H01L21/46 ; H01L21/4763 ; H01L27/01 ; H01L31/0392
摘要：
A technique capable of forming a high-quality nonporous layer with little defects is provided. When an average pore size and pore density are defined as D (nm) and N (pores/cm2), respectively, a silicon wafer is anodized to satisfy 0
信息查询
IPC分类:
