发明申请
- 专利标题： Method of fabricating semiconductor devices with replacement, coaxial gate structure
- 专利标题（中）： 用替代的同轴栅极结构制造半导体器件的方法
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申请号： US10746323申请日： 2003-12-23
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公开(公告)号： US20050136585A1公开(公告)日： 2005-06-23
- 发明人: Robert Chau , Scott Hareland , Justin Brask , Matthew Metz
- 申请人： Robert Chau , Scott Hareland , Justin Brask , Matthew Metz
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/423 ; H01L29/786 ; H01L51/30 ; H01L21/8238 ; H01L29/00
摘要：
A method is described for providing a nanostructure suspended above a substrate surface. The method includes providing a nanostructure encased in an oxide shell on a substrate and depositing a sacrificial material and a support material over the oxide encased nanostructure. Then, the sacrificial material is removed to expose the oxide encased nanostructure. Once the oxide encased nanostructure has been exposed, the oxide shell is removed from the oxide encased nanostructure such that the nanostructure is suspended above the substrate surface.
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