发明申请
- 专利标题： Thermal processing unit and thermal processing method
- 专利标题（中）： 热处理单元和热处理方法
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申请号： US10942103申请日： 2004-09-16
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公开(公告)号： US20050136693A1公开(公告)日： 2005-06-23
- 发明人: Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
- 申请人： Kazuhide Hasebe , Yutaka Takahashi , Kota Umezawa , Satoshi Takagi , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
- 优先权： JP2003-324470 20030917
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; C23C16/455 ; H01L21/205 ; H01L21/314 ; H01L21/318 ; H01L21/324 ; H01L21/336 ; H01L21/31 ; H01L21/469
摘要：
The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.
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