Invention Application
- Patent Title: Methods for forming a field effect transistor
- Patent Title (中): 形成场效应晶体管的方法
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Application No.: US10956311Application Date: 2004-09-30
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Publication No.: US20050142729A1Publication Date: 2005-06-30
- Inventor: Hyunsoo Shin , Kyusung Kim
- Applicant: Hyunsoo Shin , Kyusung Kim
- Priority: KR10-2003-0100531 20031230
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/265 ; H01L21/336 ; H01L21/8228 ; H01L21/8238 ; H01L23/62
Abstract:
Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.
Public/Granted literature
- US07402484B2 Methods for forming a field effect transistor Public/Granted day:2008-07-22
Information query
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