发明申请
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10969550申请日： 2004-10-20
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公开(公告)号： US20050142855A1公开(公告)日： 2005-06-30
- 发明人: Yong Choi
- 申请人： Yong Choi
- 专利权人： Dongbu Electronics Co., Ltd.
- 当前专利权人： Dongbu Electronics Co., Ltd.
- 优先权： KR10-2003-0100491 20031230
- 主分类号： G03F7/16
- IPC分类号： G03F7/16 ; H01L21/4763 ; H01L21/768 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a bottom anti-reflective coating (BARC) in a via hole in an interlayer dielectric on a semiconductor substrate sufficiently to fill the via hole; disposing an acid diffusion material on the BARC; forming a cross-link layer between the BARC and the acid diffusion material; removing the remaining acid diffusion material; and etching the cross-link layer, the BARC and the interlayer dielectric to form a trench extending from an upper portion of the via hole.
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