发明申请
- 专利标题： Vertical Carbon Nanotube Field Effect Transistor
- 专利标题（中）： 垂直碳纳米管场效应晶体管
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申请号： US10707726申请日： 2004-01-07
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公开(公告)号： US20050145838A1公开(公告)日： 2005-07-07
- 发明人: Toshiharu Furukawa , Steven Holmes , Mark Hakey , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人： Toshiharu Furukawa , Steven Holmes , Mark Hakey , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/336 ; H01L29/78 ; H01L29/786 ; H01L51/30
摘要：
A field effect transistor employs a vertically oriented carbon nanotube as the transistor body, the nanotube being formed by deposition within a vertical aperture, with an optional combination of several nanotubes in parallel to produced quantized current drive and an optional change in the chemical composition of the carbon material at the top or at the bottom to suppress short channel effects.
公开/授权文献
- US1620750A Apparatus for separating liquids and gases 公开/授权日：1927-03-15
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