发明申请
US20050146965A1 Semiconductor memory device having internal circuits responsive to temperature data and method thereof
失效
具有响应于温度数据的内部电路的半导体存储器件及其方法
- 专利标题： Semiconductor memory device having internal circuits responsive to temperature data and method thereof
- 专利标题（中）： 具有响应于温度数据的内部电路的半导体存储器件及其方法
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申请号： US10981652申请日： 2004-11-05
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公开(公告)号： US20050146965A1公开(公告)日： 2005-07-07
- 发明人: Soo-Young Kim , Sang-Jae Rhee , Min-Gyu Hwang
- 申请人： Soo-Young Kim , Sang-Jae Rhee , Min-Gyu Hwang
- 优先权： KR2003-95107 20031223
- 主分类号： G11C11/401
- IPC分类号： G11C11/401 ; G11C5/14 ; G11C7/06 ; G11C7/10 ; H03K3/012 ; H03K17/00 ; H03K17/16
摘要：
A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.